N_a/2SC4448
{"Category":"NPN Transistor, Transistor","Amps":"0.15A","MHz":"240 MHz","Volts":"250V"}...
521 Bytes - 02:44:59, 01 July 2024
Onsemi.com/2SC4448R
{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"100","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"100","Package":"TO-252var","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"120","Military":"N"}...
847 Bytes - 02:44:59, 01 July 2024
Onsemi.com/2SC4448S
{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"280","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"100","Package":"TO-252var","h(FE) Min. Static Current Gain":"140","V(BR)CBO (V)":"120","Military":"N"}...
846 Bytes - 02:44:59, 01 July 2024
Onsemi.com/2SC4448T
{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"1.0","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"400","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"100","Package":"TO-252var","h(FE) Min. Static Current Gain":"200","V(BR)CBO (V)":"120","Military":"N"}...
847 Bytes - 02:44:59, 01 July 2024
Toshiba.co.jp/2SC4448
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"2-10R1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"250 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"240 MHz","Collector Current-Max (IC)":"0.1500 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position"...
1419 Bytes - 02:44:59, 01 July 2024