Product Datasheet Search Results:
4 Pages, 128 KB, Original- 2SA1358
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, PNP, Si, POWER TRANSISTOR
4 Pages, 128 KB, Original- 2SA1358-O
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, PNP, Si, POWER TRANSISTOR
4 Pages, 128 KB, Original- 2SA1358O
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, PNP, Si, POWER TRANSISTOR
4 Pages, 128 KB, Original- 2SA1358-O(Q)
- Toshiba
- Trans GP BJT PNP 120V 1A 3-Pin(3+Tab) TO-126IS
4 Pages, 128 KB, Original- 2SA1358-Y
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, PNP, Si, POWER TRANSISTOR
4 Pages, 128 KB, Original- 2SA1358Y
- Toshiba America Electronic Components, Inc.
- 1 A, 120 V, PNP, Si, POWER TRANSISTOR
4 Pages, 128 KB, Original- 2SA1358-Y(Q)
- Toshiba
- Trans GP BJT PNP 120V 1A 3-Pin(3+Tab) TO-126IS
Product Details Search Results:
N_a/2SA1358
{"Category":"PNP Transistor, Transistor","Amps":"1A","MHz":"120 MHz","Volts":"120V"}...
518 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transis...
1399 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarit...
1400 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358O
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shape...
1369 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358-O(Q)
{"Collector Current (DC) ":"1(A)","Configuration":"Single","Transistor Polarity":"PNP","Collector-Emitter Voltage":"120(V)","Category ":"Bipolar Power","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"120(MHz)","Package Type":"TO-126IS","Collector-Base Voltage":"120(V)","DC Current Gain":"80@100MA@5V","Mounting":"Through Hole","Output Power":"Not Required(W)","Power Dissipation":"10(W)","Pin Count":"3 +Tab"...
1583 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358-Y
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polari...
1399 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358Y
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"120 MHz","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP","Package Shap...
1369 Bytes - 18:52:37, 24 November 2024
Toshiba.co.jp/2SA1358-Y(Q)
{"Collector Current (DC) ":"1(A)","Configuration":"Single","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"1 A","Collector-Emitter Voltage":"120(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","DC Current Gain (Min)":"120","Operating Temperature Classification":"Military","Power Dissipation":"10(W)","Operating Temp Range":"-55C to 150C","Frequency":"120(MHz)","Package Type":"TO-126IS","Collector-Base Voltage":"120(V)","Rad Hardened":"No","Output Power":"No...
1651 Bytes - 18:52:37, 24 November 2024
Various/2SA1358O
{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"1.5","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"160","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"120","Package":"TO-126var","h(FE) Min. Static Current Gain":"80","V(BR)CBO (V)":"120","Military":"N"}...
816 Bytes - 18:52:37, 24 November 2024
Various/2SA1358Y
{"@I(C) (A) (Test Condition)":"100m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"1.5","I(C) Abs.(A) Collector Current":"1.0","h(FE) Max. Current gain.":"240","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"120M","V(BR)CEO (V)":"120","Package":"TO-126var","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"120","Military":"N"}...
817 Bytes - 18:52:37, 24 November 2024
