Toshiba.co.jp/2SA1162GR
{"V(CE)sat Max.(V)":"300m","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test ...
1020 Bytes - 20:09:37, 20 June 2024
Toshiba.co.jp/2SA1162GRTE85L
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transist...
1429 Bytes - 20:09:37, 20 June 2024