Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-92-3","Other Names":"2N7000G-ND 2N7000GOS","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N7000 Datasheet","Power - Max":"350mW","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)",...

{"Terminal Finish":"GOLD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDU...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2(A)","Mounting":"Through Hole","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Bag","Power Dissipation":"1(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"5(ohm)","Number of Elements":"1"}...