Product Datasheet Search Results:
- 2N6989U
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- 2N6989UJAN
- New England Semiconductor
- MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
- 2N6989UJANS
- New England Semiconductor
- MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
- 2N6989UJANTX
- New England Semiconductor
- MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
- 2N6989UJANTXV
- Microsemi Corporation
- MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
Product Details Search Results:
Dla.mil/2N6989U+JAN
{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"250M","I(C) Abs.(A) Collector Current":"800m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"50","Package":"TO-116","h(FE) Min. Static Current Gain":"75","Military":"Y","Mil Number":"JAN2N6989U"}...
917 Bytes - 12:50:55, 28 November 2024
Dla.mil/2N6989U+JANTX
{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"250M","I(C) Abs.(A) Collector Current":"800m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"50","Package":"TO-116","h(FE) Min. Static Current Gain":"75","Military":"Y","Mil Number":"JANTX2N6989U"}...
929 Bytes - 12:50:55, 28 November 2024
Dla.mil/2N6989U+JANTXV
{"@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon","Number of Devices":"4","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"250M","I(C) Abs.(A) Collector Current":"800m","P(D) Max.(W) Power Dissipation":"1.5","V(BR)CEO (V)":"50","Package":"TO-116","h(FE) Min. Static Current Gain":"75","Military":"Y","Mil Number":"JANTXV2N6989U"}...
934 Bytes - 12:50:55, 28 November 2024
Microsemi.com/2N6989U
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"0.8000 A","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Surface M...
1383 Bytes - 12:50:55, 28 November 2024
Microsemi.com/JAN2N6989U
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC-20","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"QUAD","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Number of Elements":"4","Transistor Type...
1294 Bytes - 12:50:55, 28 November 2024
Microsemi.com/JANS2N6989U
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"0.8000 A","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Surface M...
1409 Bytes - 12:50:55, 28 November 2024
Microsemi.com/JANTX2N6989U
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Transistor Type":"4 NPN (Quad)","Frequency - Transition":"-","Family":"Transistors (BJT) - Arrays","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Series":"Military, MIL-PRF-19500/559","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"20-CLCC","Packaging":"Bulk","Datasheets":"2N6989(U), 2N6990","Power - Max":"1W"...
1524 Bytes - 12:50:55, 28 November 2024
Microsemi.com/JANTXV2N6989U
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC-20","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"QUAD","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Number of Elements":"4","Transistor Type...
1310 Bytes - 12:50:55, 28 November 2024
Optekinc.com/2N6989U
{"Brand":"Optek / TT Electronics","Product Category":"Bipolar Transistors - BJT","RoHS":"No","Manufacturer":"TT Electronics"}...
1005 Bytes - 12:50:55, 28 November 2024
Optek_tt_electronics_/2N6989U
{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"Ceramic","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"8....
1614 Bytes - 12:50:55, 28 November 2024
Optek_tt_electronics_/2N6989UTX
{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"Ceramic","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"8....
1656 Bytes - 12:50:55, 28 November 2024
Optek_tt_electronics_/2N6989UTXV
{"Category":"Bipolar Power","Dimensions":"8.89 x 8.89 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"8.89 mm","Package Type":"Ceramic","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"8....
1632 Bytes - 12:50:55, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
1SAS057989U1200.pdf | 0.06 | 1 | Request |