{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"3.7","I(D) Abs. Max.(A) Drain Curr.":"7.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"50","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1M","Package":"TO-204AA","Military":"Y","Mil Number":"...

{"C(iss) Max. (F)":"500p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"3.7","I(D) Abs. Max.(A) Drain Curr.":"7.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"50","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.5","@Freq. (Hz) (Test Condition)":"1M","Package":"TO-204AA","Military":"Y","Mil Number":"...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Power Dissipation":"75(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transist...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-3","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-3","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"350@10V mOhm","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"100 V","Num...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6804","Power - Max":"75W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u0...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-3","Typical Turn-On Delay Time":"60(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.36@10V Ohm","Manufacturer":"Microsemi"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"4(W)","Continuous Drain Current":"11(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/562","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6804","Power - Max":"75W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Co...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"2","DS Bre...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Featured Product":"High Reliability Power \/ Military MOSFETs","Package \/ Case":"TO-204AA, TO-3","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Tc)","Gate Charge (Qg) @ Vgs":"29nC @ 10V","Product Photos":"TO-204AA, TO-3","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11A, 10V","Datasheets":"2N6804","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V"...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"360 mOhm @ 11A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/562","Package \/ Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA (TO-3)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6804","Power - Max":"75W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Co...