Product Datasheet Search Results:

2N6650.pdf5 Pages, 396 KB, Original
2N6650
Advanced Semiconductor, Inc.
Silicon Transistor Selection Guide
2N6656.pdf1 Pages, 43 KB, Scan
2N6656
Thomson-csf
Shortform Semiconductor Catalogue 1982
2N6657.pdf1 Pages, 43 KB, Scan
2N6657
Thomson-csf
Shortform Semiconductor Catalogue 1982
2N6658.pdf1 Pages, 43 KB, Scan
2N6658
Thomson-csf
Shortform Semiconductor Catalogue 1982
2N6659.pdf1 Pages, 43 KB, Scan
2N6659
Thomson-csf
Shortform Semiconductor Catalogue 1982
2N6650.pdf4 Pages, 161 KB, Original
2N6650
Central Semiconductor
Darlington Transistors PNP Pwr Darlington
2N6650LEADFREE.pdf2 Pages, 87 KB, Original
2N6650LEADFREE
Central Semiconductor Corp.
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
2N6653.pdf1 Pages, 80 KB, Original
2N6654.pdf1 Pages, 80 KB, Original

Product Details Search Results:

Centralsemi.com/2N6650
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"100 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"6 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GEN...
1326 Bytes - 06:35:17, 17 November 2024
Centralsemi.com/2N6650LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"100 W","Collector Current-Max (IC)":"10 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"80 V","Terminal Position":"BOTTOM","Transistor Application":"SWITCHING","Case Conne...
1421 Bytes - 06:35:17, 17 November 2024
Dla.mil/2N6650+JAN
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silicon"...
1031 Bytes - 06:35:17, 17 November 2024
Dla.mil/2N6650+JANTX
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silico...
1043 Bytes - 06:35:17, 17 November 2024
Dla.mil/2N6650+JANTXV
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silic...
1049 Bytes - 06:35:17, 17 November 2024
Dla.mil/2N665+JAN
{"V(CE)sat Max.(V)":"0.9","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"80","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"10m","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20k","@V(CE) (V) (Test Condition)":"14","@I(B) (A) (Test Condition)":"200m","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JAN2N665","@I(C) (A) (Test Condition)":"2.0","t(r) Max. (s) Rise time":"5.0u","t(f) Max. (s) Fall time.":"5.0u"}...
1006 Bytes - 06:35:17, 17 November 2024
Microsemi.com/2N6650
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"10 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"DARLINGTON","Number of Terminals":"2","Numbe...
1188 Bytes - 06:35:17, 17 November 2024
Microsemi.com/2N6650JANTX
{"Polarity":"PNP","Collector Current (DC) ":"10 A","Collector-Emitter Saturation Voltage":"2 V","Collector-Emitter Voltage":"80 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Package Type":"TO-3","Collector-Base Voltage":"80 V","DC Current Gain":"100","Pin Count":"2 +Tab","Number of Elements":"1"}...
1426 Bytes - 06:35:17, 17 November 2024
Microsemi.com/2N6653
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1215 Bytes - 06:35:17, 17 November 2024
Microsemi.com/2N6654
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"350 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1216 Bytes - 06:35:17, 17 November 2024
Microsemi.com/2N6655
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Number of Terminals":"2","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"400 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"FLANGE MOUNT","Number of...
1187 Bytes - 06:35:17, 17 November 2024
Microsemi.com/JANTX2N6650
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","DC Current Gain (hFE) (Min) @ Ic, Vce":"1000 @ 5A, 3V","Transistor Type":"PNP - Darlington","Product Photos":"JANTX2N6650","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 100\u00b5A, 10A","Current - Collector Cutoff (Max)":"1mA","Series":"Military, MIL-PRF-19500/527","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"80V","Supplier Device Package":"TO-204AA (TO-3)","Packaging"...
1678 Bytes - 06:35:17, 17 November 2024

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