Product Datasheet Search Results:
- 2N3866A
- Advanced Power Technology
- RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
- 2N3866A
- Advanced Semiconductor, Inc.
- UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
- 2N3866A
- Central Semiconductor Corp.
- HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
Product Details Search Results:
Advancedsemiconductor.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"RO...
1344 Bytes - 17:34:43, 26 November 2024
Centralsemi.com/2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-3","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"800 MHz","Highest Frequency Band":"HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor...
1365 Bytes - 17:34:43, 26 November 2024
Dla.mil/2N3866A+JAN
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JAN2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)":...
1053 Bytes - 17:34:43, 26 November 2024
Dla.mil/2N3866A+JANS
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANS2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)"...
1060 Bytes - 17:34:43, 26 November 2024
Dla.mil/2N3866A+JANTX
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTX2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F)...
1066 Bytes - 17:34:43, 26 November 2024
Dla.mil/2N3866A+JANTXV
{"Absolute Max. Power Diss. (W)":"5.0","V(BR)CBO (V)":"55","h(FE) Min. Static Current Gain":"25","I(C) Abs.(A) Collector Current":"400m","h(FE) Max. Current gain.":"200","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100u","@V(CBO) (V) (Test Condition)":"55","Package":"TO-39","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"800M","V(BR)CEO (V)":"30","Military":"Y","Mil Number":"JANTXV2N3866A","@I(C) (A) (Test Condition)":"50m","Semiconductor Material":"Silicon","C(obo) (Max) (F...
1072 Bytes - 17:34:43, 26 November 2024
Microsemi.com/2N3866A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Frequency - Transition":"400MHz","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N3866(A)","Power - Max":"1W","Gain":"-","Package / Case":"TO-205AD, TO-39-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) (Min) ...
1376 Bytes - 17:34:43, 26 November 2024
Microsemi.com/2N3866AJANTX
{"Collector Current (DC) ":"0.4 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"30 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"3.5 V","Category ":"Bipolar RF","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-65C to 200C","Frequency":"800 MHz","Package Type":"TO-39","Collector-Base Voltage":"60 V","DC Current Gain":"25","Pin Count":"3","Number of Elements":"1"}...
1467 Bytes - 17:34:43, 26 November 2024
Microsemi.com/2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transis...
1418 Bytes - 17:34:43, 26 November 2024
Microsemi.com/JAN2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Tra...
1366 Bytes - 17:34:43, 26 November 2024
Microsemi.com/JAN2N3866AUB
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICO...
1408 Bytes - 17:34:43, 26 November 2024
Microsemi.com/JANJ2N3866A
{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1187 Bytes - 17:34:43, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
B43866A1106M002.pdf | 0.52 | 1 | Request | |
B43866A1336M007.pdf | 0.52 | 1 | Request | |
B43866A4226M009.pdf | 0.52 | 1 | Request | |
B43866A1107M003.pdf | 0.52 | 1 | Request | |
B43866A2107M004.pdf | 0.52 | 1 | Request | |
B43866A2106M007.pdf | 0.52 | 1 | Request | |
B43866A1107M002.pdf | 0.52 | 1 | Request | |
B43866A4106M002.pdf | 0.52 | 1 | Request | |
B43866A1227M009.pdf | 0.52 | 1 | Request | |
B43866A4106M008.pdf | 0.52 | 1 | Request | |
B43866A1227M008.pdf | 0.52 | 1 | Request | |
B43866A4226M008.pdf | 0.52 | 1 | Request |