Datasheet.Directory

{"@I(C) (A) (Test Condition)":"400","t(d)off Max. (s) Off time":"1.5u","V(CE)sat Max.(V)":"2.8","Absolute Max. Power Diss. (W)":"1.6k","V(BR)CES (V)":"600","I(C) Abs.(A) Collector Current":"400","t(r) Max. (s) Rise time":"350n","Circuits Per Package":"2","Package":"MODULE-var","@V(GE) (Test Condition)":"15","td(on) Max (s) On time delay":"1.2u"}...

{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Turn-off Time-Nom (toff)":"800 ns","Collector-emitter Voltage-Max":"600 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"400 A","Turn-on Time-Nom (ton)":"800 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND CUR LIMITIN...