Product Datasheet Search Results:
13 Pages, 490 KB, Original- 2MBI200U4H-120
- Fuji Electric
- 2MBI200U4H-120
13 Pages, 431 KB, Original- 2MBI200U4H-120-50
- Fuji Electric
- IGBT Array & Module Transistor, N Channel, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module
Product Details Search Results:
Fujielectric.co.jp/2MBI200U4H-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"410 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"300 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"320 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configurati...
1350 Bytes - 20:13:29, 18 December 2024
Fujielectric.co.jp/2MBI200U4H-120-50
{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.05 V","MSL:":"-","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"1.04 kW","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised","Transistor Type:":"IGBT Module"}...
1328 Bytes - 20:13:29, 18 December 2024
Documentation and Support
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