Datasheet.Directory

{"Status":"ACTIVE","Turn-on Time-Nom (ton)":"600 ns","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Turn-off Time-Nom (toff)":"530 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuratio...

{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.6 V","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"1.5 kW","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"450 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"350 ns","Collector Current-Max (IC)":"300 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","...

{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.6 V","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"1.5 kW","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised","Transistor Type:":"IGBT Module"}...