Product Datasheet Search Results:

2MBI150U4A-120.pdf13 Pages, 474 KB, Original
2MBI150U4A-120-50.pdf13 Pages, 417 KB, Original
2MBI150U4A-120-50
Fuji Electric
IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module

Product Details Search Results:

Fujielectric.co.jp/2MBI150U4A-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"410 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"320 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configurati...
1350 Bytes - 04:34:19, 19 December 2024
Fujielectric.co.jp/2MBI150U4A-120-50
{"Transistor Polarity:":"N Channel","Collector Emitter Voltage V(br)ceo:":"1.2 kV","Collector Emitter Voltage Vces:":"2.3 V","No. of Pins:":"7","DC Collector Current:":"200 A","Power Dissipation Pd:":"735 W","Transistor Case Style:":"Module","Operating Temperature Max:":"150 \u00b0C","SVHC:":"To Be Advised"}...
1312 Bytes - 04:34:19, 19 December 2024

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