Advancedsemiconductor.com/1N5811
{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Terminal Form":"WIRE","Number of Terminals":"2","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"LONG FORM","Reverse Recovery Time-Max":"0.0300 us","Number of Elements":"1"}...
1187 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811+JAN
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JAN1N5811","@I(R) (A) (Test Condition)":"1.0"}...
1028 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811+JANS
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANS1N5811","@I(R) (A) (Test Condition)":"1.0"}...
1034 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811+JANTX
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTX1N5811","@I(R) (A) (Test Condition)":"1.0"}...
1040 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811+JANTXV
{"@Temp. (°C) (Test Condition)":"75","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"30n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"6.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"1.0","@I(FM) (A) (Test Condition)":"4.0","Mil Number":"JANTXV1N5811","@I(R) (A) (Test Condition)":"1.0"}...
1046 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@T...
1152 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","@...
1159 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n","...
1165 Bytes - 06:57:18, 29 May 2024
Dla.mil/1N5811US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"125","I(O) Max.(A) Output Current":"6","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"DO-213AB","I(RM) Max.(A) Pk. Rev. Current":"150u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5811US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"30n",...
1170 Bytes - 06:57:18, 29 May 2024
Eic_semiconductor/1N5811US
{"Peak Rep Rev Volt":"150(V)","Product Depth (mm)":"3.6(mm)","Peak Non-Repetitive Surge Current":"125(A)","Rev Curr":"5(uA)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Forward Voltage":"0.875(V)","Product Length (mm)":"4.8(mm)","Rectifier Type":"Switching Diode","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"SMB","Maximum Forward Current":"6000(mA)","Operating T...
1705 Bytes - 06:57:18, 29 May 2024
Microchip.com/1N5811
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"Case E"}...
1454 Bytes - 06:57:18, 29 May 2024
Microchip.com/1N5811E3
1034 Bytes - 06:57:18, 29 May 2024
Microchip.com/1N5811/TR
852 Bytes - 06:57:18, 29 May 2024
Microchip.com/1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Peak Rep Rev Volt":"150(V)","Maximum Forward Current":"6000(mA)","Package Type":"E-MELF","Configuration":"Single","Pin Count":"2"}...
1445 Bytes - 06:57:18, 29 May 2024
Microchip.com/GRP-A-DATA-1N5811USJANTXV-
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Configuration":"Single","Pin Count":"2","Package Type":"E-MELF"}...
1522 Bytes - 06:57:18, 29 May 2024
Microchip.com/GRP-A-DATA-JANTX1N5811
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"Case E"}...
1500 Bytes - 06:57:18, 29 May 2024
Microchip.com/GRP-DATA-JANTXV1N5811US
925 Bytes - 06:57:18, 29 May 2024
Microchip.com/JAN1N5811
1052 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANS1N5811
1059 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANS1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Rep Rev Volt":"150(V)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Waffle","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"E-MELF","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1471 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANTX1N5811
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Configuration":"Single","Pin Count":"2","Package Type":"Case E"}...
1450 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANTX1N5811US
867 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANTXV1N5811
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"Case E","Maximum Forward Current":"6000(mA)","Peak Forward Voltage":"0.875(V)","Peak Reverse Current":"5(uA)","Configuration":"Single","Pin Count":"2"}...
1453 Bytes - 06:57:18, 29 May 2024
Microchip.com/JANTXV1N5811US
{"Peak Reverse Current":"5(uA)","Peak Non-Repetitive Surge Current":"125(A)","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Peak Rep Rev Volt":"150(V)","Configuration":"Single","Pin Count":"2","Package Type":"E-MELF"}...
1469 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS PACKAGE-2","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND",...
1278 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811AUS
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Operating Temperature Classification":"Military","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Peak Reverse Current":"5(uA)","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"B-MELF","Maximum Forward Current":"6000(mA)","Rev Curr":"5(uA)","Peak Forward Voltage":"0.875(V)",...
1532 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811C3
832 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811 (CAT3)
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Forward Current":"6000(mA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"Case B","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Rev Curr":"5(uA)","Pea...
1608 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811CB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, E, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of T...
1245 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811CB-TR
730 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811CBUS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, D-5B, 2 PIN","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Average Forward Current-Max":"3 A","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Con...
1286 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811E3
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"ROHS COMPLIANT, HERMETIC SEALED, GLASS, E, 2 PIN","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"ULTRA FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"R...
1322 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811E3/TR
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Forward Current":"6000(mA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"Case B","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Rev Curr":"5(uA)","Pea...
1593 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811JAN
{"Peak Rep Rev Volt":"150 V","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Through Hole","Rad Hardened":"No","Forward Voltage":"0.875 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30 ns","Package Type":"Case E","Rev Curr":"5 uA","Configuration":"Single","Pin Count":"2"}...
1394 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811JANS
{"Peak Rep Rev Volt":"150 V","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Through Hole","Rad Hardened":"No","Forward Voltage":"0.875 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30 ns","Package Type":"Case E","Rev Curr":"5 uA","Configuration":"Single","Pin Count":"2"}...
1368 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811JANTX
{"Peak Rep Rev Volt":"150 V","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Through Hole","Rad Hardened":"No","Forward Voltage":"0.875 V","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30 ns","Package Type":"Case E","Rev Curr":"5 uA","Configuration":"Single","Pin Count":"2"}...
1402 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811JANTXV
{"Peak Rep Rev Volt":"150(V)","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Through Hole","Forward Current":"6000(mA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"Case E","Peak Forward Voltage":"0.875(V)","Maximum Forward Current":"6000(mA)","Re...
1623 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Terminal Form":"WIRE","Package Style":"LONG FORM","Number of Phases":"1","Diode Element Material":"SILICON","Application":"FAST RECOVERY","Average Forward Current-Max":"6 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.0300 us","Number of El...
1169 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811/TR
680 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811TR
{"Category":"Discrete Semiconductor Products","Packaging":"Tape & Reel (TR)","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"5\u00b5A @ 150V","Mounting Type":"Through Hole","Product Photos":"1N5811TR","Standard Package":"4,000","Series":"-","Capacitance @ Vr, F":"-","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"-","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,9,11","Family":"Diodes, Rectifiers - Single","Operating Temperature - Junction":"-65\u00...
1770 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811U4
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"REC...
1255 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811U4M
{"Status":"ACTIVE","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-2","Terminal Form":"NO LEAD","Package Style":"CHIP CARRIER","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"6 A","Application":"GENERAL PURPOSE","Number of Elements":"1","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"BOTTOM","Diode Type":"RECTIFIER DIODE","Package Shape":"REC...
1264 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811URS
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS, MELF-2","Terminal Form":"WRAP AROUND","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"150 V","Number of Phases":"1","Diode Element Material":"SILICON","Average Forward Current-Max":"3 A","Application":"ULTRA FAST RECOVERY","Number of Elements":"1","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"125 A","Terminal Position":"END","Diode Type":"RECTIFIER DIODE","Package Shape":"ROUND","...
1291 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811US
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"5\u00b5A @ 50V","Mounting Type":"Surface Mount","Product Photos":"1N6643US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"60pF @ 10V, 1MHz","Voltage - Forward (Vf) (Max) @ If":"875mV @ 4A","Supplier Device Package":"B, SQ-MELF","Reverse Recovery Time (trr)":"30ns","Datasheets":"1N5807,09,11 US\/URS","Family":"Diodes, Rectifiers - Single","Operating Temperature - J...
1810 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811USC3
777 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811US-E3
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"30(ns)","Mounting":"Surface Mount","Forward Current":"6000(mA)","Peak Reverse Current":"5(uA)","Rad Hardened":"No","Forward Voltage":"0.875(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30(ns)","Package Type":"B-MELF","Maximum Forward Current":"6000(mA)","Rev Curr":"5(uA)","Peak Forward Vo...
1562 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811USE3
{"Rectifier Type":"Switching Diode","Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"125(A)","Forward Current":"6000(mA)","Mounting":"Surface Mount","Forward Voltage":"0.875(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Rad Hardened":"No","Rev Recov Time":"30(ns)","Package Type":"B-MELF","Operating Temp Range":"-65C to 175C","Rev Curr":"5(uA)","Configuration":"Single","Pin Count":"2"}...
1381 Bytes - 06:57:18, 29 May 2024
Microsemi.com/1N5811USJAN
{"Peak Rep Rev Volt":"150","Avg. Forward Curr (Max)":"6","Peak Non-Repetitive Surge Current":"125 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"Yes","Forward Voltage":"0.875","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"30","Package Type":"E-MELF","Peak Non-Repetitive Surge Current (Max)":"125","Rev Curr":"5","Configuration":"Single","Pin Count":"2"}...
1448 Bytes - 06:57:18, 29 May 2024