Product Datasheet Search Results:

1N5621.pdf1 Pages, 72 KB, Scan
1N5621
Thomson-csf
Shortform Semiconductor Catalogue 1982
1N5621.pdf2 Pages, 406 KB, Original
1N5621
Central Semiconductor Corp.
1 A, 800 V, SILICON, SIGNAL DIODE
1N5621BK.pdf1 Pages, 28 KB, Scan
1N5621BK
Central Semiconductor Corp.
1 A, 800 V, SILICON, SIGNAL DIODE
1N5621TR.pdf1 Pages, 28 KB, Scan
1N5621TR
Central Semiconductor Corp.
1 A, 800 V, SILICON, SIGNAL DIODE

Product Details Search Results:

Centralsemi.com/1N5621
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"800 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.3000 us","Number of Elements":"1"}...
1150 Bytes - 07:09:13, 29 November 2024
Centralsemi.com/1N5621BK
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"800 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.3000 us","Number of Elements":"1"}...
1160 Bytes - 07:09:13, 29 November 2024
Centralsemi.com/1N5621TR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"800 V","Diode Element Material":"SILICON","Average Forward Current-Max":"1 A","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.3000 us","Number of Elements":"1"}...
1160 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Package":"Axial-3.5","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5621","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"300n","@Temp (°C) (Test Condition)":"55","I(RM...
1103 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Package":"Axial-3.5","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5621","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"300n","@Temp (°C) (Test Condition)":"55","I(R...
1107 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Package":"Axial-3.5","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5621","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"300n","@Temp (°C) (Test Condition)":"55","I(...
1115 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"50","I(O) Max.(A) Output Current":"1","@I(R) (A) (Test Condition)":"1","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Package":"Axial-3.5","I(RM) Max.(A) Pk. Rev. Current":"25u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5621","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"300n","@Temp (°C) (Test Condition)":"55","I...
1120 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JAN1N5621US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANS1N5621US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTX1N5621US","@I(R) (A) (Test Condition)":"1.0"}...
1054 Bytes - 07:09:13, 29 November 2024
Dla.mil/1N5621US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.6","Package":"DO-213AB","I(O) Max.(A) Output Current":"1.0","I(RM) Max.(A) Reverse Current":"500n","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"3.0","Mil Number":"JANTXV1N5621US","@I(R) (A) (Test Condition)":"1.0"}...
1060 Bytes - 07:09:13, 29 November 2024
Microchip.com/JAN1N5621US
1054 Bytes - 07:09:13, 29 November 2024

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