Product Datasheet Search Results:

1N5553US+JAN.pdf21 Pages, 553 KB, Scan
1N5553US+JAN
Defense Electronics Supply Center
3.0A Iout, 800V Vrrm Fast Recovery Rectifier
1N5553US+JANS.pdf21 Pages, 553 KB, Scan
1N5553US+JANS
Defense Electronics Supply Center
3.0A Iout, 800V Vrrm Fast Recovery Rectifier
1N5553US+JANTX.pdf21 Pages, 553 KB, Scan
1N5553US+JANTX
Defense Electronics Supply Center
3.0A Iout, 800V Vrrm Fast Recovery Rectifier
1N5553US+JANTXV.pdf21 Pages, 553 KB, Scan
1N5553US+JANTXV
Defense Electronics Supply Center
3.0A Iout, 800V Vrrm Fast Recovery Rectifier
1N5553US+JANTXV.pdf5 Pages, 174 KB, Original
1N5553US+JANTXV
Microsemi
Diode Switching 800V 5A 2-Pin E-MELF

Product Details Search Results:

Dla.mil/1N5553US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 18:23:22, 18 December 2024
Dla.mil/1N5553US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 18:23:22, 18 December 2024
Dla.mil/1N5553US+JANTX
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1052 Bytes - 18:23:22, 18 December 2024
Dla.mil/1N5553US+JANTXV
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.3","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"800","V(RRM)(V) Rep.Pk.Rev. Voltage":"800","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5553US","@I(R) (A) (Test Condition)":"1.0"}...
1060 Bytes - 18:23:22, 18 December 2024
Microsemi.com/1N5553US+JANTXV
{"Peak Rep Rev Volt":"800","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100 A","Rectifier Type":"Switching Diode","Mounting":"Surface Mount","Rad Hardened":"Yes","Forward Voltage":"1.3","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Rev Recov Time":"2000","Package Type":"E-MELF","Peak Non-Repetitive Surge Current (Max)":"100","Rev Curr":"1","Configuration":"Single","Pin Count":"2"}...
1465 Bytes - 18:23:22, 18 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
2TCZ152001N5530.pdf0.071Request
2TCZ162011N5530.pdf0.091Request
2TCZ182001N5530.pdf0.071Request
2TCZ162001N5530.pdf0.071Request
2TCZ152011N5530.pdf0.071Request