Product Datasheet Search Results:

1MBH08D-120.pdf4 Pages, 498 KB, Original
1MBH08D-120.pdf4 Pages, 493 KB, Original
1MBH08D-120
Fujitsu Limited
15 A, 1200 V, N-CHANNEL IGBT

Product Details Search Results:

Fujielectric.co.jp/1MBH08D-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"15 A","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Number of Terminals":"3","Number of Elements":"1"}...
1215 Bytes - 03:19:16, 22 November 2024
Fujitsu.com/1MBH08D-120
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3PL, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"300 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"15 A","Turn-on Time-Nom (ton)":"160 ns","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTA...
1293 Bytes - 03:19:16, 22 November 2024

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